High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors
نویسندگان
چکیده
Complementary inverters using IGZO n-channel and DNTT p-channel source-gated transistors are demonstrated for the first time. They exhibit gain of 368 V −1 , 94% noise margin matching on-current relatively similar widths.
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2023
ISSN: ['2050-7526', '2050-7534']
DOI: https://doi.org/10.1039/d3tc02474a